SICFET N-CH 1200V 65A HIP247 SCTWA50N120
The pictures are for reference only
Description:
SICFET N-CH 1200V 65A HIP247
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SCTWA50N120(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory75308,Price reference "real-time change" China/Hongkong。 SCTWA50N120 package/specs, Download SCTWA50N120、Datasheet。