IRF1010EZPBF parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IRF1010EZPBF

Description:

MOSFET N-CH 60V 75A TO220AB

Stock:

82810

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.35

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Parameters

Current at 25 ° C - continuous drain (Id)

75A(Tc)

Drain source voltage (Vdss)

60 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

86 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

2810 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

8.5 mΩ @ 51A,10V

Power dissipation (maximum)

140W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 100µA

packing

pipe

series

HEXFET®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

TO-220AB

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

On sale

DataSheet

下载IRF1010EZPBF.pdf

IRF1010EZPBF（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory82810,Price reference "real-time change" China/Hongkong。 IRF1010EZPBF package/specs, Download IRF1010EZPBF、Datasheet。