MOSFET N-CH 600V 8A D2PAK STB8NM60D
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Description:
MOSFET N-CH 600V 8A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
STB8NM60D(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory88244,Price reference "real-time change" China/Hongkong。 STB8NM60D package/specs, Download STB8NM60D、Datasheet。