MOSFET N-CH 600V 19A POWERFLAT STL26NM60N
The pictures are for reference only
Description:
MOSFET N-CH 600V 19A POWERFLAT
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STL26NM60N(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory25930,Price reference "real-time change" China/Hongkong。 STL26NM60N package/specs, Download STL26NM60N、Datasheet。