MOSFET N-CH 30V 1.8A 6MICROFET FDFME3N311ZT
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Description:
MOSFET N-CH 30V 1.8A 6MICROFET
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Schottky diode (isolated)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDFME3N311ZT(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory3021,Price reference "real-time change" China/Hongkong。 FDFME3N311ZT package/specs, Download FDFME3N311ZT、Datasheet。