MOSFET N-CH 525V 2.5A DPAK STD4N52K3
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Description:
MOSFET N-CH 525V 2.5A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STD4N52K3(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory94609,Price reference "real-time change" China/Hongkong。 STD4N52K3 package/specs, Download STD4N52K3、Datasheet。