TRENCH >=100V IPT030N12N3GATMA1
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Description:
TRENCH >=100V
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPT030N12N3GATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory65028,Price reference "real-time change" China/Hongkong。 IPT030N12N3GATMA1 package/specs, Download IPT030N12N3GATMA1、Datasheet。