MOSFET N-CH 40V 80A D2PAK STB80N4F6AG
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Description:
MOSFET N-CH 40V 80A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, STripFET™
DataSheet
STB80N4F6AG(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory56717,Price reference "real-time change" China/Hongkong。 STB80N4F6AG package/specs, Download STB80N4F6AG、Datasheet。