MOSFET N-CH 50V 100MA CP3 5HN01C-TB-E
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Description:
MOSFET N-CH 50V 100MA CP3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
5HN01C-TB-E(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory2457,Price reference "real-time change" China/Hongkong。 5HN01C-TB-E package/specs, Download 5HN01C-TB-E、Datasheet。