SICFET N-CH 1200V 40A HIP247 SCT30N120D2
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Description:
SICFET N-CH 1200V 40A HIP247
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SCT30N120D2(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory9331,Price reference "real-time change" China/Hongkong。 SCT30N120D2 package/specs, Download SCT30N120D2、Datasheet。