MOSFET N-CH 600V 10A DPAK STD13N60M6
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Description:
MOSFET N-CH 600V 10A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STD13N60M6(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory59163,Price reference "real-time change" China/Hongkong。 STD13N60M6 package/specs, Download STD13N60M6、Datasheet。