MOSFET N-CH 20V 4.2A 8SO IRF1902GPBF
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Description:
MOSFET N-CH 20V 4.2A 8SO
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRF1902GPBF(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory93031,Price reference "real-time change" China/Hongkong。 IRF1902GPBF package/specs, Download IRF1902GPBF、Datasheet。