MOSFET N-CH 650V 18A I2PAK STI20N65M5
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Description:
MOSFET N-CH 650V 18A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STI20N65M5(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory36201,Price reference "real-time change" China/Hongkong。 STI20N65M5 package/specs, Download STI20N65M5、Datasheet。