STFU25N60M2-EP parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

STFU25N60M2-EP

Description:

MOSFET N-CH 600V 18A TO220FP

Stock:

51933

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.37

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Parameters

Current at 25 ° C - continuous drain (Id)

18A(Tc)

Drain source voltage (Vdss)

600 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

29 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

1090 pF @ 100 V

On resistance (maximum) for different Ids and Vgs

188 mΩ @ 9A,10V

Power dissipation (maximum)

30W(Tc)

Vgs (max)

±25V

Vgs (th) (maximum) for different Ids

4.75V @ 250µA

packing

pipe

series

MDmesh™ M2

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

TO-220FP

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

On sale

DataSheet

下载STFU25N60M2-EP.pdf

STFU25N60M2-EP（MOSFET）BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory51933,Price reference "real-time change" China/Hongkong。 STFU25N60M2-EP package/specs, Download STFU25N60M2-EP、Datasheet。