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    Home/    Category/    MOSFET/    STP18N60M2

    MOSFET N-CH 600V 13A TO220 STP18N60M2

    STP18N60M2 image
    The pictures are for reference only
    Brand:
    ST
    Model:
    STP18N60M2
    Description:
    MOSFET N-CH 600V 13A TO220
    Stock:
    73322
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    13A(Tc)
  • Drain source voltage (Vdss)
    600 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    21.5 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    791 pF @ 100 V
  • On resistance (maximum) for different Ids and Vgs
    280 mΩ @ 6.5A,10V
  • Power dissipation (maximum)
    110W(Tc)
  • Vgs (max)
    ±25V
  • Vgs (th) (maximum) for different Ids
    4V @ 250µA
  • packing
    pipe
  • series
    MDmesh™ II Plus
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    TO-220
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Through-Hole
  • Part status
    On sale
    • PDFicoDataSheet
    STP18N60M2（MOSFET）BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory73322,Price reference "real-time change" China/Hongkong。 STP18N60M2 package/specs, Download STP18N60M2、Datasheet。
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