MOSFET N-CH 500V 22A I2PAK STB25NM50N-1
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Description:
MOSFET N-CH 500V 22A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB25NM50N-1(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory70433,Price reference "real-time change" China/Hongkong。 STB25NM50N-1 package/specs, Download STB25NM50N-1、Datasheet。