MOSFET N-CH 650V 19A TO220AB STP24NM65N
The pictures are for reference only
Description:
MOSFET N-CH 650V 19A TO220AB
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STP24NM65N(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory99565,Price reference "real-time change" China/Hongkong。 STP24NM65N package/specs, Download STP24NM65N、Datasheet。