MOSFET N-CH 650V 11A D2PAK STB15N65M5
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Description:
MOSFET N-CH 650V 11A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB15N65M5(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory77211,Price reference "real-time change" China/Hongkong。 STB15N65M5 package/specs, Download STB15N65M5、Datasheet。