MOSFET N-CH 30V 6.8A 8SOIC NTMS4816NR2G
The pictures are for reference only
Description:
MOSFET N-CH 30V 6.8A 8SOIC
Contact Us
Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTMS4816NR2G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory361,Price reference "real-time change" China/Hongkong。 NTMS4816NR2G package/specs, Download NTMS4816NR2G、Datasheet。