MOSFET N-CH 600V 20A I2PAK STB20NM60-1
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Description:
MOSFET N-CH 600V 20A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB20NM60-1(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory90805,Price reference "real-time change" China/Hongkong。 STB20NM60-1 package/specs, Download STB20NM60-1、Datasheet。