MOSFET N-CH 600V 8A TO220AB STP8NM60D
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Description:
MOSFET N-CH 600V 8A TO220AB
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STP8NM60D(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory94730,Price reference "real-time change" China/Hongkong。 STP8NM60D package/specs, Download STP8NM60D、Datasheet。