MOSFET N-CH 650V 9A IPAK STU10NM65N
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Description:
MOSFET N-CH 650V 9A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STU10NM65N(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory24923,Price reference "real-time change" China/Hongkong。 STU10NM65N package/specs, Download STU10NM65N、Datasheet。