MOSFET N-CH 600V 25A D2PAK STB30NM60N
The pictures are for reference only
Description:
MOSFET N-CH 600V 25A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB30NM60N(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory1825,Price reference "real-time change" China/Hongkong。 STB30NM60N package/specs, Download STB30NM60N、Datasheet。