MOSFET N-CH 600V 4.6A D2PAK STB6NM60N
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Description:
MOSFET N-CH 600V 4.6A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB6NM60N(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory24545,Price reference "real-time change" China/Hongkong。 STB6NM60N package/specs, Download STB6NM60N、Datasheet。