MOSFET BVDSS: 41V~60V TO252 T&R DMT67M8LK3-13
The pictures are for reference only
Description:
MOSFET BVDSS: 41V~60V TO252 T&R
The market price fluctuates. Please consult the customer service for the actual price
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMT67M8LK3-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory56286,Price reference "real-time change" China/Hongkong。 DMT67M8LK3-13 package/specs, Download DMT67M8LK3-13、Datasheet。