MOSFET N-CH 650V 8.5A I2PAK STI12N65M5
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Description:
MOSFET N-CH 650V 8.5A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STI12N65M5(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory18203,Price reference "real-time change" China/Hongkong。 STI12N65M5 package/specs, Download STI12N65M5、Datasheet。