MOSFET P-CH 20V 2.3A 8SOIC NTMSD2P102R2SG
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Description:
MOSFET P-CH 20V 2.3A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Schottky diode (isolated)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTMSD2P102R2SG(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory46291,Price reference "real-time change" China/Hongkong。 NTMSD2P102R2SG package/specs, Download NTMSD2P102R2SG、Datasheet。