MOSFET N-CH 600V 10A IPAK STU11NM60ND
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Description:
MOSFET N-CH 600V 10A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STU11NM60ND(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory93907,Price reference "real-time change" China/Hongkong。 STU11NM60ND package/specs, Download STU11NM60ND、Datasheet。