MOSFET N-CH 100V 180A H2PAK-6 STH180N10F3-6
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Description:
MOSFET N-CH 100V 180A H2PAK-6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STH180N10F3-6(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory7440,Price reference "real-time change" China/Hongkong。 STH180N10F3-6 package/specs, Download STH180N10F3-6、Datasheet。