MOSFET N-CH 650V 10A TO220 STP10N65K3
The pictures are for reference only
Description:
MOSFET N-CH 650V 10A TO220
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STP10N65K3(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory65963,Price reference "real-time change" China/Hongkong。 STP10N65K3 package/specs, Download STP10N65K3、Datasheet。