MOSFET N-CH 600V 15.8A 4DFN TK16V60W,LVQ
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Description:
MOSFET N-CH 600V 15.8A 4DFN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK16V60W,LVQ(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory97581,Price reference "real-time change" China/Hongkong。 TK16V60W,LVQ package/specs, Download TK16V60W,LVQ、Datasheet。