MOSFET N-CH 1200V 6A ISOWATT STFW6N120K3
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Description:
MOSFET N-CH 1200V 6A ISOWATT
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STFW6N120K3(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory83541,Price reference "real-time change" China/Hongkong。 STFW6N120K3 package/specs, Download STFW6N120K3、Datasheet。