IRF8721TRPBF parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IRF8721TRPBF

Description:

MOSFET N-CH 30V 14A 8SO

Stock:

20706

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.16

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Parameters

Current at 25 ° C - continuous drain (Id)

14A(Ta)

Drain source voltage (Vdss)

30 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

12 nC @ 4.5 V

Input capacitance at different Vds (Ciss) (maximum)

1040 pF @ 15 V

On resistance (maximum) for different Ids and Vgs

8.5 mΩ @ 14A,10V

Power dissipation (maximum)

2.5W(Ta)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

2.35V @ 25µA

packing

TR,CT

series

HEXFET®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SO

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载IRF8721TRPBF.pdf

IRF8721TRPBF（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory20706,Price reference "real-time change" China/Hongkong。 IRF8721TRPBF package/specs, Download IRF8721TRPBF、Datasheet。