MOSFET P-CH 60V 3A 8SOIC STS3P6F6
The pictures are for reference only
Description:
MOSFET P-CH 60V 3A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STS3P6F6(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory43151,Price reference "real-time change" China/Hongkong。 STS3P6F6 package/specs, Download STS3P6F6、Datasheet。