NTHL041N60S5H NTHL041N60S5H
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Description:
NTHL041N60S5H
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTHL041N60S5H(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory4397,Price reference "real-time change" China/Hongkong。 NTHL041N60S5H package/specs, Download NTHL041N60S5H、Datasheet。