MOSFET N-CH 100V 80A H2PAK-2 STH80N10F7-2
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Description:
MOSFET N-CH 100V 80A H2PAK-2
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STH80N10F7-2(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory64970,Price reference "real-time change" China/Hongkong。 STH80N10F7-2 package/specs, Download STH80N10F7-2、Datasheet。