MOSFET N/P-CH 8-SOIC BSO613SPVGXUMA1
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Description:
MOSFET N/P-CH 8-SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, SIPMOS®
DataSheet
BSO613SPVGXUMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory12505,Price reference "real-time change" China/Hongkong。 BSO613SPVGXUMA1 package/specs, Download BSO613SPVGXUMA1、Datasheet。