MOSFET N-CH 650V 11A IPAK STU16N65M2
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Description:
MOSFET N-CH 650V 11A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STU16N65M2(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory83727,Price reference "real-time change" China/Hongkong。 STU16N65M2 package/specs, Download STU16N65M2、Datasheet。