MOSFET N-CH 650V 20A 8HSOF IPT60R125G7XTMA1
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Description:
MOSFET N-CH 650V 20A 8HSOF
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPT60R125G7XTMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory79957,Price reference "real-time change" China/Hongkong。 IPT60R125G7XTMA1 package/specs, Download IPT60R125G7XTMA1、Datasheet。