MOSFET N-CH 650V 12A I2PAK STI18N65M2
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Description:
MOSFET N-CH 650V 12A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STI18N65M2(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory9612,Price reference "real-time change" China/Hongkong。 STI18N65M2 package/specs, Download STI18N65M2、Datasheet。