MOSFET N-CH 80V 110A H2PAK-2 STH110N8F7-2
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Description:
MOSFET N-CH 80V 110A H2PAK-2
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STH110N8F7-2(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory21283,Price reference "real-time change" China/Hongkong。 STH110N8F7-2 package/specs, Download STH110N8F7-2、Datasheet。