SCTWA35N65G2VAG parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

SCTWA35N65G2VAG

Description:

SICFET N-CH 650V 45A TO247

Stock:

29807

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：13794459602(Wechat)

Q Q：3469113929

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Parameters

Current at 25 ° C - continuous drain (Id)

45A(Tc)

Drain source voltage (Vdss)

650 V

Drive voltage (maximum RdsOn, minimum RdsOn)

18V,20V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

73 nC @ 20 V

Input capacitance at different Vds (Ciss) (maximum)

1370 pF @ 400 V

On resistance (maximum) for different Ids and Vgs

72mΩ @ 20A,20V

Power dissipation (maximum)

208W(Tc)

Vgs (max)

+20V,-5V

Vgs (th) (maximum) for different Ids

3.2V @ 1mA

packing

pipe

series

technology

SiCFET(silicon carbide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

TO-247 lengthfeedthrough

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

On sale

DataSheet

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SCTWA35N65G2VAG（MOSFET）BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory29807,Price reference "real-time change" China/Hongkong。 SCTWA35N65G2VAG package/specs, Download SCTWA35N65G2VAG、Datasheet。