MOSFET N-CH 200V 19A TO220-3 FQP19N20C
The pictures are for reference only
Description:
MOSFET N-CH 200V 19A TO220-3
Contact Us
Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQP19N20C(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory56406,Price reference "real-time change" China/Hongkong。 FQP19N20C package/specs, Download FQP19N20C、Datasheet。