DIODE DMN2025U
The pictures are for reference only
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMN2025U(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory20288,Price reference "real-time change" China/Hongkong。 DMN2025U package/specs, Download DMN2025U、Datasheet。