SIC MOS TO247-4L 22MOHM 1200V NTH4L022N120M3S
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Description:
SIC MOS TO247-4L 22MOHM 1200V
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTH4L022N120M3S(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory51597,Price reference "real-time change" China/Hongkong。 NTH4L022N120M3S package/specs, Download NTH4L022N120M3S、Datasheet。