MOSFET N-CH TO263 SIPC20S2N06LX6SA1
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Description:
MOSFET N-CH TO263
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SIPC20S2N06LX6SA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory64104,Price reference "real-time change" China/Hongkong。 SIPC20S2N06LX6SA1 package/specs, Download SIPC20S2N06LX6SA1、Datasheet。