MOSFET N-CH 600V 1A DPAK FQD1N60CTM
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Description:
MOSFET N-CH 600V 1A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQD1N60CTM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory85185,Price reference "real-time change" China/Hongkong。 FQD1N60CTM package/specs, Download FQD1N60CTM、Datasheet。