MOSFET N-CH 30V 40A 8TSON TPN4R303NL,L1Q
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Description:
MOSFET N-CH 30V 40A 8TSON
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TPN4R303NL,L1Q(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory48933,Price reference "real-time change" China/Hongkong。 TPN4R303NL,L1Q package/specs, Download TPN4R303NL,L1Q、Datasheet。