MOSFET N-CH 100V 33A TO220-3 FQP33N10
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Description:
MOSFET N-CH 100V 33A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQP33N10(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory62547,Price reference "real-time change" China/Hongkong。 FQP33N10 package/specs, Download FQP33N10、Datasheet。