MOSFET N-CH 30V 60A DPAK TK60P03M1,RQ(S
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Description:
MOSFET N-CH 30V 60A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK60P03M1,RQ(S(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory23794,Price reference "real-time change" China/Hongkong。 TK60P03M1,RQ(S package/specs, Download TK60P03M1,RQ(S、Datasheet。